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OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V

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Shenzhen Canyi Technology Co., Ltd.

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OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V

Brand Name : JC

Model Number : OSPF12N65C

Certification : RoHS

Place of Origin : Jiangxi, China

MOQ : Negotiable

Price : Negotiated

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000PCS Per Day

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Name : Power Jfet Transistor

Drain-Source Voltage : 650V

Gate-Source Voltage-Continuous : ±30V

Drain Current-Continuous（Note 2） : 12A

Drain Current-Single Plused（Note 1） : 48A

Power Dissipation （Note 2) : 50W

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OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V

Power Jfet Transistor Features

High input impedance and low level drive
Avalanche energy tested
Improved dv/dt capability,high ruggedness
Low gate charge
Low Rdson(typical 5.5mΩ)
Fast switching

Power Jfet Transistor Applications

High efficiency switch mode power supplies
Power factor correction

Absolute Maximum Ratings (Tc=25°C)

Symbol	Parameters	Ratings	Unit
V_DSS	Drain-Source Voltage	650	V
V_GS	Gate-Source Voltage-Continuous	±30	V
I_D	Drain Current-Continuous(Note 2)	12	A
I_DM	Drain Current-Single Plused(Note 1)	48	A
P_D	Power Dissipation (Note 2)	51	W
T_j	Max.Operating junction temperature	150	℃

Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol		Parameters		Min	Typ	Max	Units	Conditions
Static Characteristics
B_VDSS		Drain-Source Breakdown VoltageCurrent (Note 1)		650	--	--	V	I_D=250µA,V_GS=0V,T_J=25°C
V_GS(th)		Gate Threshold Voltage		2.0	--	4.0	V	V_DS=V_GS,I_D=250μA
R_DS(on)		Drain-Source On-Resistance		--	0.65	0.68	Ω	V_GS=10V,I_D=6A
I_GSS		Gate-Body Leakage Current		--	--	±100	nA	V_GS=±30V,V_DS=0
I_DSS		Zero Gate Voltage Drain Current		--	--	1	μA	V_DS=650V,V_GS=0
gfs		Forward Transconductance		3.6	--	--	S	V_D_S=15V,I_D=5A
Switching Characteristics
T_d(on)		Turn-On Delay Time	--		30	75	ns	V_DS=325V,I_D=12A, R_G=25Ω(Note 2)
T_r		Rise Time	--		115	240	ns
T_d(_off₎		Turn-Off Delay Time	--		95	205	ns
T_f		Fall Time	--		85	180	ns
Q_g		Total Gate Charge	--		42	55	nC	V_DS=520,V_GS=10V, I_D=12A(Note 2)
Q_gs		Gate-Source Charge	--		8.5	--	nC
Q_gd		Gate-Drain Charge	--		21.5	--	nC
Dynamic Characteristics
C_iss	Input Capacitance		--		1460	--	pF	V_DS=25V,V_GS=0, f=1MHz
C_oss	Output Capacitance		--		205	--	pF
C_rss	Reverse Transfer Capacitance		--		24.8	--	pF
I_S	Continuous Drain-Source Diode Forward Current(Note 2)		--		--	12	A
V_SD	Diode Forward On-Voltage		--		--	1.4	V	I_S=12A,V_GS=0
R_th(j-c)	Thermal Resistance, Junction to Case		--		--	3.65	℃/W

Our Company

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.

Our Advantage:
1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading experience individually.
5. Strong technical support to help customers choose the most appropriate products.
6. Be proud of the product and the competitive price.

Product Tags:

mosfet power transistor

high power transistor

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